[3177pcs Stock]
- Bilang ng Bahagi:
- NVD5802NT4G-TB01
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 40V 101A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Single, Mga module ng Power driver and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NVD5802NT4G-TB01 electronic components. NVD5802NT4G-TB01 can be shipped within 24 hours after order. If you have any demands for NVD5802NT4G-TB01, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVD5802NT4G-TB01 Mga katangian ng produkto
Bilang ng Bahagi :
NVD5802NT4G-TB01
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 40V 101A DPAK
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
16.4A (Ta), 101A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
4.4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 12V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 93.75W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK (SINGLE GAUGE)
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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