IRLB3813PBF Pagpepresyo (USD) [46760pcs Stock]
- 1 pcs$0.75676
- 10 pcs$0.68443
- 100 pcs$0.55009
- 500 pcs$0.42786
- 1,000 pcs$0.33534
- Bilang ng Bahagi:
- IRLB3813PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 260A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRLB3813PBF electronic components. IRLB3813PBF can be shipped within 24 hours after order. If you have any demands for IRLB3813PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLB3813PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRLB3813PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 260A TO-220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
260A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.95 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8420pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
230W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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