DMN61D8LQ-13 Pagpepresyo (USD) [555022pcs Stock]
- 1 pcs$0.06664
- 10,000 pcs$0.05873
- Bilang ng Bahagi:
- DMN61D8LQ-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V SOT23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN61D8LQ-13 electronic components. DMN61D8LQ-13 can be shipped within 24 hours after order. If you have any demands for DMN61D8LQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D8LQ-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN61D8LQ-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 60V SOT23
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
470mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
3V, 5V
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
0.74nC @ 5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
12.9pF @ 12V
Tampok ng FET :
-
Power Dissipation (Max) :
390mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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