GaN Systems GS6650x 650V GaN Transistors

Author : Gan systems Published Time : 2016-04-01
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Features

650V enhancement mode power switchTop cooled configurationUltra low FOM Island Technology™ dieLow inductance GaNPX™ packageReverse current capability

Applications

Automotive HEV/PHEV/EV InvertersOnboard battery chargers400V DC-DC conversionInverters, UPS, and VFD motor drive
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