2SK879-GR(TE85L,F) Pagpepresyo (USD) [663036pcs Stock]
- 1 pcs$0.05579
- Bilang ng Bahagi:
- 2SK879-GR(TE85L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- JFET N-CH 0.1W USM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SK879-GR(TE85L,F) electronic components. 2SK879-GR(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 2SK879-GR(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK879-GR(TE85L,F) Mga katangian ng produkto
Bilang ng Bahagi :
2SK879-GR(TE85L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
JFET N-CH 0.1W USM
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Boltahe - Breakdown (V (BR) GSS) :
-
Drain sa Source Voltage (Vdss) :
-
Kasalukuyang - Drain (Idss) @ Vds (Vgs = 0) :
2.6mA @ 10V
Kasalukuyang Drain (Id) - Max :
-
Boltahe - Cutoff (VGS off) @ Id :
400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds :
8.2pF @ 10V
Paglaban - RDS (On) :
-
Kapangyarihan - Max :
100mW
Temperatura ng pagpapatakbo :
125°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SC-70, SOT-323
Package ng Tagabigay ng Device :
USM
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