BSP297H6327XTSA1 Pagpepresyo (USD) [225689pcs Stock]
- 1 pcs$0.16389
- 1,000 pcs$0.13031
- Bilang ng Bahagi:
- BSP297H6327XTSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 660MA SOT-223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga module ng Power driver, Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSP297H6327XTSA1 electronic components. BSP297H6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSP297H6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP297H6327XTSA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSP297H6327XTSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 660MA SOT-223
Serye :
SIPMOS®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
660mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 660mA, 10V
Vgs (th) (Max) @ Id :
1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs :
16.1nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
357pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1.8W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223-4
Pakete / Kaso :
TO-261-4, TO-261AA
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