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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. MURTA400120

GeneSiC Semiconductor - MURTA400120

KEY Part #: K6468865

MURTA400120 Pagpepresyo (USD) [768pcs Stock]

  • 1 pcs$60.52443
  • 18 pcs$36.55488
Bilang ng Bahagi:
MURTA400120
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
DIODE GEN 1.2KV 200A 3 TOWER. Rectifiers 1200V 400A Si Super Fast Recovery
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Diode - RF and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor MURTA400120 electronic components. MURTA400120 can be shipped within 24 hours after order. If you have any demands for MURTA400120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURTA400120 Mga katangian ng produkto

Bilang ng Bahagi : MURTA400120
Tagagawa : GeneSiC Semiconductor
Paglalarawan : DIODE GEN 1.2KV 200A 3 TOWER
Serye : -
Katayuan ng Bahagi : Active
Pag-configure ng Diode : 1 Pair Common Cathode
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 200A
Boltahe - Ipasa (Vf) (Max) @ Kung : 2.6V @ 200A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 25µA @ 1200V
Operating temperatura - Junction : -55°C ~ 150°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Three Tower
Package ng Tagabigay ng Device : Three Tower
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