FQB4N80TM Pagpepresyo (USD) [102947pcs Stock]
- 1 pcs$0.37982
- 800 pcs$0.34882
- Bilang ng Bahagi:
- FQB4N80TM
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 3.9A D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQB4N80TM electronic components. FQB4N80TM can be shipped within 24 hours after order. If you have any demands for FQB4N80TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB4N80TM Mga katangian ng produkto
Bilang ng Bahagi :
FQB4N80TM
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 800V 3.9A D2PAK
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 Ohm @ 1.95A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
880pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.13W (Ta), 130W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D²PAK (TO-263AB)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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