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  5. JAN1N5807US

Microsemi Corporation - JAN1N5807US

KEY Part #: K6453027

JAN1N5807US Pagpepresyo (USD) [9771pcs Stock]

  • 1 pcs$4.66293
  • 100 pcs$4.63973
Bilang ng Bahagi:
JAN1N5807US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 50V 6A B-MELF. ESD Suppressors / TVS Diodes MIL, QPL PART, 3A 50V ULTRAFAST RECT- SQ END CAPS
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation JAN1N5807US electronic components. JAN1N5807US can be shipped within 24 hours after order. If you have any demands for JAN1N5807US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5807US Mga katangian ng produkto

Bilang ng Bahagi : JAN1N5807US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 50V 6A B-MELF
Serye : Military, MIL-PRF-19500/477
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 6A
Boltahe - Ipasa (Vf) (Max) @ Kung : 875mV @ 4A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 50V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, B
Package ng Tagabigay ng Device : B, SQ-MELF
Operating temperatura - Junction : -65°C ~ 175°C

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