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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. NVMFD5C650NLT1G

ON Semiconductor - NVMFD5C650NLT1G

KEY Part #: K6521907

NVMFD5C650NLT1G Pagpepresyo (USD) [82350pcs Stock]

  • 1 pcs$0.47481
Bilang ng Bahagi:
NVMFD5C650NLT1G
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET 2N-CH 60V 111A S08FL.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Rectifiers - Single ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor NVMFD5C650NLT1G electronic components. NVMFD5C650NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5C650NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5C650NLT1G Mga katangian ng produkto

Bilang ng Bahagi : NVMFD5C650NLT1G
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET 2N-CH 60V 111A S08FL
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 2546pF @ 25V
Kapangyarihan - Max : 3.5W (Ta), 125W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerTDFN
Package ng Tagabigay ng Device : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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