IFS100B12N3E4B31BOSA1 Pagpepresyo (USD) [566pcs Stock]
- 1 pcs$82.05640
- Bilang ng Bahagi:
- IFS100B12N3E4B31BOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOD IGBT LOW PWR ECONO.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IFS100B12N3E4B31BOSA1 electronic components. IFS100B12N3E4B31BOSA1 can be shipped within 24 hours after order. If you have any demands for IFS100B12N3E4B31BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IFS100B12N3E4B31BOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
IFS100B12N3E4B31BOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOD IGBT LOW PWR ECONO
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Pag-configure :
Full Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
200A
Kapangyarihan - Max :
515W
Vce (on) (Max) @ Vge, Ic :
2.1V @ 15V, 100A
Kasalukuyang - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
6.3nF @ 25V
Input :
Standard
NTC Thermistor :
Yes
Temperatura ng pagpapatakbo :
-40°C ~ 150°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
Pinakabagong Balita
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