Vishay Semiconductor Diodes Division - VS-GB150LH120N

KEY Part #: K6533217

VS-GB150LH120N Pagpepresyo (USD) [765pcs Stock]

  • 1 pcs$60.67083
  • 12 pcs$57.78169

Bilang ng Bahagi:
VS-GB150LH120N
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
IGBT 1200V 300A 1389W INT-A-PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays and Diode - Rectifiers - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-GB150LH120N electronic components. VS-GB150LH120N can be shipped within 24 hours after order. If you have any demands for VS-GB150LH120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB150LH120N Mga katangian ng produkto

Bilang ng Bahagi : VS-GB150LH120N
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : IGBT 1200V 300A 1389W INT-A-PAK
Serye : -
Katayuan ng Bahagi : Active
Uri ng IGBT : -
Pag-configure : Single
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
Kasalukuyang - Kolektor (Ic) (Max) : 300A
Kapangyarihan - Max : 1389W
Vce (on) (Max) @ Vge, Ic : 1.87V @ 15V, 150A (Typ)
Kasalukuyang - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 10.6nF @ 25V
Input : Standard
NTC Thermistor : No
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Double INT-A-PAK (3 + 4)
Package ng Tagabigay ng Device : Double INT-A-PAK

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