IPN80R1K2P7ATMA1 Pagpepresyo (USD) [183749pcs Stock]
- 1 pcs$0.20129
- Bilang ng Bahagi:
- IPN80R1K2P7ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- COOLMOS P7 800V SOT-223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Single, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPN80R1K2P7ATMA1 electronic components. IPN80R1K2P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R1K2P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN80R1K2P7ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPN80R1K2P7ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
COOLMOS P7 800V SOT-223
Serye :
CoolMOS™ P7
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 500V
Tampok ng FET :
-
Power Dissipation (Max) :
6.8W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223
Pakete / Kaso :
TO-261-3
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