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  5. FDD10N20LZTM

ON Semiconductor - FDD10N20LZTM

KEY Part #: K6403560

FDD10N20LZTM Pagpepresyo (USD) [257272pcs Stock]

  • 1 pcs$0.14377
  • 2,500 pcs$0.13058
Bilang ng Bahagi:
FDD10N20LZTM
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 200V 7.6A DPAK-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDD10N20LZTM electronic components. FDD10N20LZTM can be shipped within 24 hours after order. If you have any demands for FDD10N20LZTM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD10N20LZTM Mga katangian ng produkto

Bilang ng Bahagi : FDD10N20LZTM
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 200V 7.6A DPAK-3
Serye : UniFET™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 585pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 83W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : DPAK
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

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