Taiwan Semiconductor Corporation - S4M R7G

KEY Part #: K6442930

S4M R7G Pagpepresyo (USD) [532126pcs Stock]

  • 1 pcs$0.06951

Bilang ng Bahagi:
S4M R7G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 1KV 4A DO214AB. Rectifiers 4A, 1000V, GLASS PASSIVATED SMD RECTIFIER
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation S4M R7G electronic components. S4M R7G can be shipped within 24 hours after order. If you have any demands for S4M R7G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S4M R7G Mga katangian ng produkto

Bilang ng Bahagi : S4M R7G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 1KV 4A DO214AB
Serye : -
Katayuan ng Bahagi : Not For New Designs
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1000V
Kasalukuyang - Average na Rectified (Io) : 4A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 4A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 60pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 150°C

Maaari ka ring Makisalamuha sa
  • VS-8EWS12STRLPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 8A D-PAK.

  • VS-8EWS08STRRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A D-PAK.

  • VS-8EWS08STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A D-PAK.

  • VS-8EWS08STRLPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A D-PAK.

  • VS-8EWF12STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 8A D-PAK.

  • VS-8EWF06STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A D-PAK.