TK9A55DA(STA4,Q,M) Pagpepresyo (USD) [57375pcs Stock]
- 1 pcs$0.75340
- 50 pcs$0.74965
- Bilang ng Bahagi:
- TK9A55DA(STA4,Q,M)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 550V 8.5A TO-220SIS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK9A55DA(STA4,Q,M) electronic components. TK9A55DA(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK9A55DA(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9A55DA(STA4,Q,M) Mga katangian ng produkto
Bilang ng Bahagi :
TK9A55DA(STA4,Q,M)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 550V 8.5A TO-220SIS
Serye :
π-MOSVII
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
550V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
860 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
40W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220SIS
Pakete / Kaso :
TO-220-3 Full Pack
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