HTNFET-D Pagpepresyo (USD) [230pcs Stock]
- 1 pcs$214.11918
- Bilang ng Bahagi:
- HTNFET-D
- Tagagawa:
- Honeywell Aerospace
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 8-DIP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Thyristors - Mga TRIAC, Transistor - Programmable Unijunction, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - RF and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Honeywell Aerospace HTNFET-D electronic components. HTNFET-D can be shipped within 24 hours after order. If you have any demands for HTNFET-D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTNFET-D Mga katangian ng produkto
Bilang ng Bahagi :
HTNFET-D
Tagagawa :
Honeywell Aerospace
Paglalarawan :
MOSFET N-CH 55V 8-DIP
Serye :
HTMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 100mA, 5V
Vgs (th) (Max) @ Id :
2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
4.3nC @ 5V
Vgs (Max) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 28V
Tampok ng FET :
-
Power Dissipation (Max) :
50W (Tj)
Temperatura ng pagpapatakbo :
-55°C ~ 225°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
8-CDIP-EP
Pakete / Kaso :
8-CDIP Exposed Pad
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