[1584pcs Stock]
- Bilang ng Bahagi:
- RS3KHE3/9AT
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 3A DO214AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Thyristors - SCR - Mga Module and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division RS3KHE3/9AT electronic components. RS3KHE3/9AT can be shipped within 24 hours after order. If you have any demands for RS3KHE3/9AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS3KHE3/9AT Mga katangian ng produkto
Bilang ng Bahagi :
RS3KHE3/9AT
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 800V 3A DO214AB
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.3V @ 2.5A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
500ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
34pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214AB, SMC
Package ng Tagabigay ng Device :
DO-214AB (SMC)
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
-
-
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VS-8EWX06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO252. Rectifiers 8A 600V 15ns Hyperfast
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-
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