SI8425DB-T1-E1 Pagpepresyo (USD) [367832pcs Stock]
- 1 pcs$0.10056
- 3,000 pcs$0.09462
- Bilang ng Bahagi:
- SI8425DB-T1-E1
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V MICROFOOT.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Mga module ng Power driver, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI8425DB-T1-E1 electronic components. SI8425DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8425DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8425DB-T1-E1 Mga katangian ng produkto
Bilang ng Bahagi :
SI8425DB-T1-E1
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 20V MICROFOOT
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1.1W (Ta), 2.7W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-WLCSP (1.6x1.6)
Pakete / Kaso :
4-UFBGA, WLCSP
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