[1961pcs Stock]
- Bilang ng Bahagi:
- IPB097N08N3 G
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 80V 70A TO263-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPB097N08N3 G electronic components. IPB097N08N3 G can be shipped within 24 hours after order. If you have any demands for IPB097N08N3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB097N08N3 G Mga katangian ng produkto
Bilang ng Bahagi :
IPB097N08N3 G
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 80V 70A TO263-3
Serye :
OptiMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
70A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2410pF @ 40V
Tampok ng FET :
-
Power Dissipation (Max) :
100W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D²PAK (TO-263AB)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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