IKB03N120H2ATMA1 Pagpepresyo (USD) [73899pcs Stock]
- 1 pcs$0.52911
- 1,000 pcs$0.47315
- Bilang ng Bahagi:
- IKB03N120H2ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT 1200V 9.6A 62.5W TO220-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Diode - Zener - Single, Mga module ng Power driver, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - JFET, Diode - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IKB03N120H2ATMA1 electronic components. IKB03N120H2ATMA1 can be shipped within 24 hours after order. If you have any demands for IKB03N120H2ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IKB03N120H2ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IKB03N120H2ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT 1200V 9.6A 62.5W TO220-3
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
9.6A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
9.9A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 3A
Kapangyarihan - Max :
62.5W
Paglipat ng Enerhiya :
290µJ
Uri ng input :
Standard
Gate Charge :
22nC
Td (on / off) @ 25 ° C :
9.2ns/281ns
Kondisyon ng Pagsubok :
800V, 3A, 82 Ohm, 15V
Reverse Recovery Time (trr) :
42ns
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
PG-TO263-3-2
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