UGB8JT-E3/81 Pagpepresyo (USD) [97852pcs Stock]
- 1 pcs$0.39959
- 800 pcs$0.37427
- 1,600 pcs$0.27950
- 2,400 pcs$0.26087
- 5,600 pcs$0.24845
- Bilang ng Bahagi:
- UGB8JT-E3/81
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0A 25ns 100 Amp IFSM
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division UGB8JT-E3/81 electronic components. UGB8JT-E3/81 can be shipped within 24 hours after order. If you have any demands for UGB8JT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8JT-E3/81 Mga katangian ng produkto
Bilang ng Bahagi :
UGB8JT-E3/81
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 600V 8A TO263AB
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
8A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.75V @ 8A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Kasalukuyang - Reverse Leakage @ Vr :
30µA @ 600V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
TO-263AB
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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