Vishay Siliconix - SI8413DB-T1-E1

KEY Part #: K6404851

SI8413DB-T1-E1 Pagpepresyo (USD) [142562pcs Stock]

  • 1 pcs$0.25945
  • 3,000 pcs$0.24363

Bilang ng Bahagi:
SI8413DB-T1-E1
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET P-CH 20V 4.8A 2X2 4-MFP.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays and Diode - Zener - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI8413DB-T1-E1 electronic components. SI8413DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8413DB-T1-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8413DB-T1-E1 Mga katangian ng produkto

Bilang ng Bahagi : SI8413DB-T1-E1
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET P-CH 20V 4.8A 2X2 4-MFP
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 48 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : -
Tampok ng FET : -
Power Dissipation (Max) : 1.47W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 4-Microfoot
Pakete / Kaso : 4-XFBGA, CSPBGA

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