2SK3666-2-TB-E Pagpepresyo (USD) [1080797pcs Stock]
- 1 pcs$0.03821
- 3,000 pcs$0.03802
- Bilang ng Bahagi:
- 2SK3666-2-TB-E
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- JFET NCH 30V 200MW 3CP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Transistor - IGBTs - Arrays and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor 2SK3666-2-TB-E electronic components. 2SK3666-2-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-2-TB-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK3666-2-TB-E Mga katangian ng produkto
Bilang ng Bahagi :
2SK3666-2-TB-E
Tagagawa :
ON Semiconductor
Paglalarawan :
JFET NCH 30V 200MW 3CP
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Boltahe - Breakdown (V (BR) GSS) :
-
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Drain (Idss) @ Vds (Vgs = 0) :
600µA @ 10V
Kasalukuyang Drain (Id) - Max :
10mA
Boltahe - Cutoff (VGS off) @ Id :
180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds :
4pF @ 10V
Paglaban - RDS (On) :
200 Ohms
Kapangyarihan - Max :
200mW
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
3-CP
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