SI8819EDB-T2-E1 Pagpepresyo (USD) [724691pcs Stock]
- 1 pcs$0.05104
- Bilang ng Bahagi:
- SI8819EDB-T2-E1
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 12V 2.9A 4-MICROFOOT.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Thyristors - Mga TRIAC, Thyristors - DIACs, SIDACs, Mga module ng Power driver, Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI8819EDB-T2-E1 electronic components. SI8819EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8819EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8819EDB-T2-E1 Mga katangian ng produkto
Bilang ng Bahagi :
SI8819EDB-T2-E1
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 12V 2.9A 4-MICROFOOT
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 3.7V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 1.5A, 3.7V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 8V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 6V
Tampok ng FET :
-
Power Dissipation (Max) :
900mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-MICRO FOOT® (0.8x0.8)
Pakete / Kaso :
4-XFBGA
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