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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. CDBGBSC101200-G

Comchip Technology - CDBGBSC101200-G

KEY Part #: K6470441

CDBGBSC101200-G Pagpepresyo (USD) [13393pcs Stock]

  • 1 pcs$3.07719
Bilang ng Bahagi:
CDBGBSC101200-G
Tagagawa:
Comchip Technology
Detalyadong Paglalarawan:
DIODE DUAL SILICON CARBIDE POWER. Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY, 10A 1200V
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Mga Transistor - Bipolar (BJT) - RF, Thyristors - SCR - Mga Module, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in Comchip Technology CDBGBSC101200-G electronic components. CDBGBSC101200-G can be shipped within 24 hours after order. If you have any demands for CDBGBSC101200-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBGBSC101200-G Mga katangian ng produkto

Bilang ng Bahagi : CDBGBSC101200-G
Tagagawa : Comchip Technology
Paglalarawan : DIODE DUAL SILICON CARBIDE POWER
Serye : -
Katayuan ng Bahagi : Active
Pag-configure ng Diode : 1 Pair Common Cathode
Uri ng Diode : Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 18A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 5A
Bilis : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 1200V
Operating temperatura - Junction : -55°C ~ 175°C
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-247-3
Package ng Tagabigay ng Device : TO-247

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