Vishay Semiconductor Diodes Division - EGF1B-1HE3/5CA

KEY Part #: K6440027

[3958pcs Stock]


    Bilang ng Bahagi:
    EGF1B-1HE3/5CA
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 100V 1A DO214BA.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Zener - Arrays, Diode - RF, Transistor - IGBTs - Mga Module, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Thyristors - SCR - Mga Module and Mga Transistor - Bipolar (BJT) - RF ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division EGF1B-1HE3/5CA electronic components. EGF1B-1HE3/5CA can be shipped within 24 hours after order. If you have any demands for EGF1B-1HE3/5CA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGF1B-1HE3/5CA Mga katangian ng produkto

    Bilang ng Bahagi : EGF1B-1HE3/5CA
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 100V 1A DO214BA
    Serye : Automotive, AEC-Q101, Superectifier®
    Katayuan ng Bahagi : Discontinued at Digi-Key
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 100V
    Kasalukuyang - Average na Rectified (Io) : 1A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 50ns
    Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V
    Capacitance @ Vr, F : 15pF @ 4V, 1MHz
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : DO-214BA
    Package ng Tagabigay ng Device : DO-214BA (GF1)
    Operating temperatura - Junction : -65°C ~ 175°C

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