CSD13381F4 Pagpepresyo (USD) [1267227pcs Stock]
- 1 pcs$0.02919
- 3,000 pcs$0.02049
- Bilang ng Bahagi:
- CSD13381F4
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET N-CH 12V 2.1A 3PICOSTAR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Transistor - IGBTs - Mga Module, Diode - Zener - Single, Thyristors - Mga SCR, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD13381F4 electronic components. CSD13381F4 can be shipped within 24 hours after order. If you have any demands for CSD13381F4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13381F4 Mga katangian ng produkto
Bilang ng Bahagi :
CSD13381F4
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET N-CH 12V 2.1A 3PICOSTAR
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.1A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 4.5V
Vgs (Max) :
8V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 6V
Tampok ng FET :
-
Power Dissipation (Max) :
500mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
3-PICOSTAR
Pakete / Kaso :
3-XFDFN
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