SIGC109T120R3LEX1SA2 Pagpepresyo (USD) [4978pcs Stock]
- 1 pcs$8.70077
- Bilang ng Bahagi:
- SIGC109T120R3LEX1SA2
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT 1200V 100A DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - JFET and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SIGC109T120R3LEX1SA2 electronic components. SIGC109T120R3LEX1SA2 can be shipped within 24 hours after order. If you have any demands for SIGC109T120R3LEX1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIGC109T120R3LEX1SA2 Mga katangian ng produkto
Bilang ng Bahagi :
SIGC109T120R3LEX1SA2
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT 1200V 100A DIE
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
-
Kasalukuyang - Kolektor ng Pulsed (Icm) :
300A
Vce (on) (Max) @ Vge, Ic :
2.1V @ 15V, 100A
Kapangyarihan - Max :
-
Paglipat ng Enerhiya :
-
Uri ng input :
Standard
Gate Charge :
-
Td (on / off) @ 25 ° C :
-
Kondisyon ng Pagsubok :
-
Reverse Recovery Time (trr) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Die
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