Bilang ng Bahagi :
IPD80R1K2P7ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 800V 4.5A TO252-3
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 500V
Power Dissipation (Max) :
37W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63