Vishay Semiconductor Diodes Division - BYM12-100HE3_A/H

KEY Part #: K6439462

BYM12-100HE3_A/H Pagpepresyo (USD) [726943pcs Stock]

  • 1 pcs$0.05088

Bilang ng Bahagi:
BYM12-100HE3_A/H
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 1A DO213AB. Rectifiers 1A,100V,50NS GL41 AEC-Q101 Qualified
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Arrays, Diode - Zener - Single, Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BYM12-100HE3_A/H electronic components. BYM12-100HE3_A/H can be shipped within 24 hours after order. If you have any demands for BYM12-100HE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM12-100HE3_A/H Mga katangian ng produkto

Bilang ng Bahagi : BYM12-100HE3_A/H
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 1A DO213AB
Serye : Automotive, AEC-Q101, Superectifier®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-213AB, MELF (Glass)
Package ng Tagabigay ng Device : DO-213AB
Operating temperatura - Junction : -65°C ~ 175°C

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