HN1C03FU-A(TE85L,F Pagpepresyo (USD) [739474pcs Stock]
- 1 pcs$0.05027
- 3,000 pcs$0.05002
- Bilang ng Bahagi:
- HN1C03FU-A(TE85L,F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS 2NPN 20V 0.3A US6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F electronic components. HN1C03FU-A(TE85L,F can be shipped within 24 hours after order. If you have any demands for HN1C03FU-A(TE85L,F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1C03FU-A(TE85L,F Mga katangian ng produkto
Bilang ng Bahagi :
HN1C03FU-A(TE85L,F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS 2NPN 20V 0.3A US6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 NPN (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
300mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
20V
Vce Saturation (Max) @ Ib, Ic :
100mV @ 3mA, 30mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 4mA, 2V
Kapangyarihan - Max :
200mW
Dalas - Paglilipat :
30MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
US6
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