Vishay Semiconductor Diodes Division - VS-HFA06TB120-N3

KEY Part #: K6442706

VS-HFA06TB120-N3 Pagpepresyo (USD) [3041pcs Stock]

  • 1,000 pcs$0.84035

Bilang ng Bahagi:
VS-HFA06TB120-N3
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 1.2KV 6A TO220AC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Mga module ng Power driver, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Single, Mga Transistor - JFET, Diode - RF and Mga Transistor - FET, MOSFET - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-HFA06TB120-N3 electronic components. VS-HFA06TB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA06TB120-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA06TB120-N3 Mga katangian ng produkto

Bilang ng Bahagi : VS-HFA06TB120-N3
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 1.2KV 6A TO220AC
Serye : HEXFRED®
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average na Rectified (Io) : 6A
Boltahe - Ipasa (Vf) (Max) @ Kung : 3V @ 6A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 80ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 1200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-2
Package ng Tagabigay ng Device : TO-220AC
Operating temperatura - Junction : -55°C ~ 150°C

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