NSB8JTHE3_A/I Pagpepresyo (USD) [104538pcs Stock]
- 1 pcs$0.37403
- 800 pcs$0.33139
- Bilang ng Bahagi:
- NSB8JTHE3_A/I
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Mga module ng Power driver, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Single and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/I electronic components. NSB8JTHE3_A/I can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/I Mga katangian ng produkto
Bilang ng Bahagi :
NSB8JTHE3_A/I
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 600V 8A TO263AB
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
8A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.1V @ 8A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
55pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
TO-263AB
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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