ZXMN2A04DN8TA Pagpepresyo (USD) [78358pcs Stock]
- 1 pcs$0.50150
- 500 pcs$0.49900
- Bilang ng Bahagi:
- ZXMN2A04DN8TA
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 5.9A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Mga Rectifier ng Bridge, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated ZXMN2A04DN8TA electronic components. ZXMN2A04DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN2A04DN8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2A04DN8TA Mga katangian ng produkto
Bilang ng Bahagi :
ZXMN2A04DN8TA
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 20V 5.9A 8-SOIC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.9A
Rds On (Max) @ Id, Vgs :
25 mOhm @ 5.9A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs :
22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
1880pF @ 10V
Kapangyarihan - Max :
1.8W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SOP
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