JAN1N6625US Pagpepresyo (USD) [5495pcs Stock]
- 1 pcs$7.53689
- 100 pcs$7.49939
- Bilang ng Bahagi:
- JAN1N6625US
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 1.1KV 1A D5A. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Espesyal na Pakay, Transistor - IGBTs - Mga Module, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation JAN1N6625US electronic components. JAN1N6625US can be shipped within 24 hours after order. If you have any demands for JAN1N6625US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N6625US Mga katangian ng produkto
Bilang ng Bahagi :
JAN1N6625US
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 1.1KV 1A D5A
Serye :
Military, MIL-PRF-19500/585
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1100V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.75V @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
60ns
Kasalukuyang - Reverse Leakage @ Vr :
1µA @ 1100V
Capacitance @ Vr, F :
10pF @ 10V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, A
Package ng Tagabigay ng Device :
D-5A
Operating temperatura - Junction :
-65°C ~ 150°C
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