ON Semiconductor - FDC855N

KEY Part #: K6397402

FDC855N Pagpepresyo (USD) [396898pcs Stock]

  • 1 pcs$0.09366
  • 3,000 pcs$0.09319

Bilang ng Bahagi:
FDC855N
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 30V 6.1A 6-SSOT.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Thyristors - SCR - Mga Module and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDC855N electronic components. FDC855N can be shipped within 24 hours after order. If you have any demands for FDC855N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDC855N Mga katangian ng produkto

Bilang ng Bahagi : FDC855N
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 30V 6.1A 6-SSOT
Serye : PowerTrench®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6.1A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 27 mOhm @ 6.1A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 655pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 1.6W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : SuperSOT™-6
Pakete / Kaso : SOT-23-6 Thin, TSOT-23-6

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