Bilang ng Bahagi :
FDC855N
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 30V 6.1A 6-SSOT
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.1A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
27 mOhm @ 6.1A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 15V
Power Dissipation (Max) :
1.6W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SuperSOT™-6
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6