NHP620MFDT3G Pagpepresyo (USD) [358937pcs Stock]
- 1 pcs$0.10305
- 5,000 pcs$0.08698
- Bilang ng Bahagi:
- NHP620MFDT3G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- DIODE GEN PURP 200V 3A SO-8FL. Rectifiers PUF 3A 200V IN SO-8F
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NHP620MFDT3G electronic components. NHP620MFDT3G can be shipped within 24 hours after order. If you have any demands for NHP620MFDT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NHP620MFDT3G Mga katangian ng produkto
Bilang ng Bahagi :
NHP620MFDT3G
Tagagawa :
ON Semiconductor
Paglalarawan :
DIODE GEN PURP 200V 3A SO-8FL
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Pag-configure ng Diode :
2 Independent
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
200V
Kasalukuyang - Average Rectified (Io) (bawat Diode) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 3A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Kasalukuyang - Reverse Leakage @ Vr :
500nA @ 200V
Operating temperatura - Junction :
-55°C ~ 175°C
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Pinakabagong Balita
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