Taiwan Semiconductor Corporation - UG06BHR0G

KEY Part #: K6432279

UG06BHR0G Pagpepresyo (USD) [801244pcs Stock]

  • 1 pcs$0.04616

Bilang ng Bahagi:
UG06BHR0G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 600MA TS-1. Rectifiers 0,6A,100V,STD. ULTRAFAST RECTIFIER
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - RF, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Mga Transistor - JFET and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation UG06BHR0G electronic components. UG06BHR0G can be shipped within 24 hours after order. If you have any demands for UG06BHR0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG06BHR0G Mga katangian ng produkto

Bilang ng Bahagi : UG06BHR0G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 100V 600MA TS-1
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 600mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 600mA
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 15ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 9pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : T-18, Axial
Package ng Tagabigay ng Device : TS-1
Operating temperatura - Junction : -55°C ~ 150°C

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