ON Semiconductor - FDB120N10

KEY Part #: K6399344

FDB120N10 Pagpepresyo (USD) [53688pcs Stock]

  • 1 pcs$0.73193
  • 800 pcs$0.72829

Bilang ng Bahagi:
FDB120N10
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET NCH 100V 74A D2PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga module ng Power driver, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays and Transistor - Programmable Unijunction ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDB120N10 electronic components. FDB120N10 can be shipped within 24 hours after order. If you have any demands for FDB120N10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB120N10 Mga katangian ng produkto

Bilang ng Bahagi : FDB120N10
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET NCH 100V 74A D2PAK
Serye : PowerTrench®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 74A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 74A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5605pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 170W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D²PAK
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Maaari ka ring Makisalamuha sa
  • TP2535N3-G

    Microchip Technology

    MOSFET P-CH 350V 0.086A TO92-3.

  • VP0106N3-G

    Microchip Technology

    MOSFET P-CH 60V 0.25A TO92-3.

  • VP0550N3-G

    Microchip Technology

    MOSFET P-CH 500V 0.054A TO92-3.

  • VN2210N3-G

    Microchip Technology

    MOSFET N-CH 100V 1.2A TO92-3.

  • IXTY1R6N50D2

    IXYS

    MOSFET N-CH 500V 1.6A DPAK.

  • IXTY1R6N100D2

    IXYS

    MOSFET N-CH 1000V 1.6A DPAK.