PMEG3010AESBZ Pagpepresyo (USD) [1403593pcs Stock]
- 1 pcs$0.02635
- 9,000 pcs$0.02369
- Bilang ng Bahagi:
- PMEG3010AESBZ
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- DIODE SCHOTTKY 30V 1A DSN1006-2.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. PMEG3010AESBZ electronic components. PMEG3010AESBZ can be shipped within 24 hours after order. If you have any demands for PMEG3010AESBZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMEG3010AESBZ Mga katangian ng produkto
Bilang ng Bahagi :
PMEG3010AESBZ
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
DIODE SCHOTTKY 30V 1A DSN1006-2
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Schottky
Boltahe - DC Reverse (Vr) (Max) :
30V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
480mV @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
3.5ns
Kasalukuyang - Reverse Leakage @ Vr :
1.25mA @ 30V
Capacitance @ Vr, F :
32pF @ 10V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
2-XDFN
Package ng Tagabigay ng Device :
DSN1006-2
Operating temperatura - Junction :
150°C (Max)
Pinakabagong Balita
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