Vishay Semiconductor Diodes Division - S1GHE3_A/I

KEY Part #: K6456014

S1GHE3_A/I Pagpepresyo (USD) [1218837pcs Stock]

  • 1 pcs$0.03035
  • 7,500 pcs$0.02825
  • 15,000 pcs$0.02511
  • 37,500 pcs$0.02354
  • 52,500 pcs$0.02093

Bilang ng Bahagi:
S1GHE3_A/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 400V 1A DO214AC. Rectifiers 1A 400V 40A@8.3ms Single Die Auto
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Diode - Zener - Arrays, Transistor - IGBTs - Arrays and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division S1GHE3_A/I electronic components. S1GHE3_A/I can be shipped within 24 hours after order. If you have any demands for S1GHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1GHE3_A/I Mga katangian ng produkto

Bilang ng Bahagi : S1GHE3_A/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 400V 1A DO214AC
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 400V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 1A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.8µs
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 400V
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

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