SPD08P06PGBTMA1 Pagpepresyo (USD) [240501pcs Stock]
- 1 pcs$0.15379
- Bilang ng Bahagi:
- SPD08P06PGBTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 60V 8.83A 3TO252.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SPD08P06PGBTMA1 electronic components. SPD08P06PGBTMA1 can be shipped within 24 hours after order. If you have any demands for SPD08P06PGBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPD08P06PGBTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
SPD08P06PGBTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 60V 8.83A 3TO252
Serye :
SIPMOS®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.83A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6.2V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 10A, 6.2V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
420pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
42W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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