IDC08D120T6MX1SA2 Pagpepresyo (USD) [62346pcs Stock]
- 1 pcs$0.62715
- Bilang ng Bahagi:
- IDC08D120T6MX1SA2
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE GEN PURP 1.2KV 10A WAFER.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IDC08D120T6MX1SA2 electronic components. IDC08D120T6MX1SA2 can be shipped within 24 hours after order. If you have any demands for IDC08D120T6MX1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC08D120T6MX1SA2 Mga katangian ng produkto
Bilang ng Bahagi :
IDC08D120T6MX1SA2
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE GEN PURP 1.2KV 10A WAFER
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1200V
Kasalukuyang - Average na Rectified (Io) :
10A
Boltahe - Ipasa (Vf) (Max) @ Kung :
2.05V @ 10A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
2.7µA @ 1200V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Sawn on foil
Operating temperatura - Junction :
-40°C ~ 175°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
BAS19
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
MMBD4448
ON Semiconductor
DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast
-
MMBD1501A
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose
-
BAS29
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
SD103BW-HE3-18
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 350MA 30V SOD123. Schottky Diodes & Rectifiers 5uA 30Volt 15A IFSM AUTO
-
BAT42W-E3-18
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123. Schottky Diodes & Rectifiers 30Volt 200mA 4A IFSM
Mga Mainit na Bahagi
- MBR1645-10HE3/45
- D251K12BXPSA1
- JTXM19500/469-05
- UF1503S-B
- SB05-05C-M-TB-E
- LS412060
- FR204TA
- JANTX1N6661US
- RGP10K-M3/73
- GP10G-4004E-M3/73
- RU 3AM
- RF 1A
- SD24145
- JANTXV1N5802
- MBRB1050HE3/45
- HER604-TP
- SS1H10HE3/61T
- S5MHE3/57T
- ESH2PD-E3/84A
- SS8PH9HM3/87A
- SS2P3-E3/85A
- SS1H10HE3/5AT
- SS19-E3/5AT
- GP30KHE3/54
- GP20B-E3/54
- EGP20DHE3/73
- STPS1545R
- STTH3002G
- LSM345JE3
- ES2A-TP
- VS-HFA16TB120PBF
- VS-1N5819
- 241NQ045R
- 1N6630
- RL103-AP
- ER303-AP
- RO 2CV1
- RU 3AV1
- S10MC M6G
- ES3A M6G