IDC08D120T6MX1SA2 Pagpepresyo (USD) [62346pcs Stock]
- 1 pcs$0.62715
- Bilang ng Bahagi:
- IDC08D120T6MX1SA2
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE GEN PURP 1.2KV 10A WAFER.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Transistor - Programmable Unijunction, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IDC08D120T6MX1SA2 electronic components. IDC08D120T6MX1SA2 can be shipped within 24 hours after order. If you have any demands for IDC08D120T6MX1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC08D120T6MX1SA2 Mga katangian ng produkto
Bilang ng Bahagi :
IDC08D120T6MX1SA2
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE GEN PURP 1.2KV 10A WAFER
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1200V
Kasalukuyang - Average na Rectified (Io) :
10A
Boltahe - Ipasa (Vf) (Max) @ Kung :
2.05V @ 10A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
2.7µA @ 1200V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Sawn on foil
Operating temperatura - Junction :
-40°C ~ 175°C
Pinakabagong Balita
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