RS1DLHRQG Pagpepresyo (USD) [1896986pcs Stock]
- 1 pcs$0.01950
- Bilang ng Bahagi:
- RS1DLHRQG
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 200V 800MA SUBSMA. Rectifiers 1A, 200V, GP SMF FAST RECOVERY
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Mga Rectifier ng Bridge, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module, Diode - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation RS1DLHRQG electronic components. RS1DLHRQG can be shipped within 24 hours after order. If you have any demands for RS1DLHRQG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1DLHRQG Mga katangian ng produkto
Bilang ng Bahagi :
RS1DLHRQG
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 200V 800MA SUBSMA
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
200V
Kasalukuyang - Average na Rectified (Io) :
800mA
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.3V @ 800mA
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
150ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 200V
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-219AB
Package ng Tagabigay ng Device :
Sub SMA
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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