Infineon Technologies - FF600R12KE4BOSA1

KEY Part #: K6532493

FF600R12KE4BOSA1 Pagpepresyo (USD) [484pcs Stock]

  • 1 pcs$95.87010

Bilang ng Bahagi:
FF600R12KE4BOSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOD IGBT MED PWR 62MM-1.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies FF600R12KE4BOSA1 electronic components. FF600R12KE4BOSA1 can be shipped within 24 hours after order. If you have any demands for FF600R12KE4BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF600R12KE4BOSA1 Mga katangian ng produkto

Bilang ng Bahagi : FF600R12KE4BOSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOD IGBT MED PWR 62MM-1
Serye : C
Katayuan ng Bahagi : Active
Uri ng IGBT : Trench Field Stop
Pag-configure : Half Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
Kasalukuyang - Kolektor (Ic) (Max) : 600A
Kapangyarihan - Max : -
Vce (on) (Max) @ Vge, Ic : 2.2V @ 15V, 600A
Kasalukuyang - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 38nF @ 25V
Input : Standard
NTC Thermistor : No
Temperatura ng pagpapatakbo : -40°C ~ 150°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : Module

Maaari ka ring Makisalamuha sa
  • GA100SICP12-227

    GeneSiC Semiconductor

    SIC CO-PACK SJT/RECT 100A 1.2KV.

  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.