Bilang ng Bahagi :
RS1GL R3G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 400V 800MA SUBSMA
Katayuan ng Bahagi :
Active
Boltahe - DC Reverse (Vr) (Max) :
400V
Kasalukuyang - Average na Rectified (Io) :
800mA
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.3V @ 800mA
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
150ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 400V
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Sub SMA
Operating temperatura - Junction :
-55°C ~ 150°C