C2M0160120D Pagpepresyo (USD) [10686pcs Stock]
- 1 pcs$3.85612
- Bilang ng Bahagi:
- C2M0160120D
- Tagagawa:
- Cree/Wolfspeed
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 19A TO-247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Thyristors - SCR - Mga Module, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver, Transistor - Programmable Unijunction and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Cree/Wolfspeed C2M0160120D electronic components. C2M0160120D can be shipped within 24 hours after order. If you have any demands for C2M0160120D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C2M0160120D Mga katangian ng produkto
Bilang ng Bahagi :
C2M0160120D
Tagagawa :
Cree/Wolfspeed
Paglalarawan :
MOSFET N-CH 1200V 19A TO-247
Serye :
Z-FET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
19A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
196 mOhm @ 10A, 20V
Vgs (th) (Max) @ Id :
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
32.6nC @ 20V
Vgs (Max) :
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
527pF @ 800V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247-3
Pakete / Kaso :
TO-247-3
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