APT13GP120BDQ1G Pagpepresyo (USD) [12204pcs Stock]
- 1 pcs$3.39375
- 72 pcs$3.37686
- Bilang ng Bahagi:
- APT13GP120BDQ1G
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- IGBT 1200V 41A 250W TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Mga module ng Power driver, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APT13GP120BDQ1G electronic components. APT13GP120BDQ1G can be shipped within 24 hours after order. If you have any demands for APT13GP120BDQ1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT13GP120BDQ1G Mga katangian ng produkto
Bilang ng Bahagi :
APT13GP120BDQ1G
Tagagawa :
Microsemi Corporation
Paglalarawan :
IGBT 1200V 41A 250W TO247
Serye :
POWER MOS 7®
Katayuan ng Bahagi :
Active
Uri ng IGBT :
PT
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
41A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
50A
Vce (on) (Max) @ Vge, Ic :
3.9V @ 15V, 13A
Kapangyarihan - Max :
250W
Paglipat ng Enerhiya :
115µJ (on), 165µJ (off)
Uri ng input :
Standard
Gate Charge :
55nC
Td (on / off) @ 25 ° C :
9ns/28ns
Kondisyon ng Pagsubok :
600V, 13A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-247-3
Package ng Tagabigay ng Device :
TO-247 [B]
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