Bilang ng Bahagi :
TK31V60X,LQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 600V 30.8A 5DFN
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
98 mOhm @ 9.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
240W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-DFN-EP (8x8)
Pakete / Kaso :
4-VSFN Exposed Pad